A THRESHOLD ANALYSIS OF THE TUNNEL INJECTION LASER.
Interim technical research rept.,
CORNELL UNIV ITHACA N Y ELECTRICAL ENGINEERING RESEARCH LAB
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A new threshold analysis of the tunnel injection laser is given that differs from previous treatments in that an additional loss mechanism is considered. This new loss mechanism, a result of the attenuation the photon wave suffers because of the power loss in the confining metal boundaries, causes a slight increase in the threshold current density of the tunnel laser. For a device one millimeter long composed of GaAs at 77K, the threshold current is 54 Asq cm. The analysis of the loss suggests a modification of the originally proposed thickness of the semiconductor wafer. In order that a lasing mode propagate with negligible power loss in the metal boundaries, the thickness of the semiconductor region should be increased to ten microns. This would facilitate the fabrication of the wafer, but may result in a pulsed output. Author