LOW-NOISE L-BAND TRANSISTOR.
Final rept. for 15 May 64-30 Jun 65,
TEXAS INSTRUMENTS INC DALLAS
Pagination or Media Count:
A research and development program is described for a germanium microwave low-noise amplifier transistor with a noise figure goal of 3.0 db and practical gain at 1.3 Gc. Final state-of-the-art samples averaged 3.1 db noise figure and 9.4 db gain. Technology work is described and the device design is discussed. Microwave testing is discussed and test results are given. Author