Accession Number:

AD0621517

Title:

SOLID STATE MICROWAVE POWER RECTIFIERS.

Descriptive Note:

Final rept.,

Corporate Author:

RAYTHEON CO BURLINGTON MASS MICROWAVE AND POWER TUBE DIV

Personal Author(s):

Report Date:

1965-08-01

Pagination or Media Count:

88.0

Abstract:

Special test equipment were developed for rapidly recording the static characteristics of the test diodes both before and after testing, for the purpose of correlating their static characteristics with their performance as microwave power rectifiers. This equipment was very useful in selecting diode for test. Special equipment for determining rectification efficiency were developed and tests made at 2.44, 5.72, and 10.17 Gcs. At the beginning of this investigation point contact diodes were the only type that had shown microwave power rectification efficiencies in excess of 60. However, after the Raytheon Company had demonstrated the feasibility of flying a helicopter powered from a microwave beam, Hewlett-Packard Associates submitted four samples of their new Schottky barrier diodes in a 0.180 in x 0.080 in package, and Sylvania Products Semiconductor Division submitted 12 samples of an experimental Schottky barrier diode in cartridge form for power rectification efficiency tests. Somewhat later the Transitron Electronic Corporation submitted samples of their SG-8004 and SG-8005 diodes, and the Japanese submitted samples of their new 1N82BG diodes for test.

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE