Accession Number:

AD0621308

Title:

FAST NEUTRON IRRADIATION-EFFECTS ON GAAS(1-X)P(X) P-N DIODE LASER THRESHOLD CURRENTS,

Descriptive Note:

Corporate Author:

CORNELL UNIV ITHACA N Y ELECTRICAL ENGINEERING RESEARCH LAB

Report Date:

1965-01-01

Pagination or Media Count:

5.0

Abstract:

Two of the major problems associated with the construction of laser diodes from ternary system material are the chemical purity and the inhomogeneous polycrystalline nature of the final product. Both effects increase the current density necessary for laser action. In this investigation, 4 GaAs1-xPx diodes of various phosphorus substitution percentages were bombarded with fast neutrons in order to determine the dependence of threshold current densities on the total neutron flux. It appeared that surface damage effects of the laser cavity masked any information concerning the crystalline homogeneity effects on laser current thresholds. Present investigation is being made of irradiations of the initial crystal material and subsequent polishing into laser cavities to remove such surface effects. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE