Accession Number:

AD0621205

Title:

FIELD EFFECT ON MAGNETORESISTANCE OF N-TYPE INDIUM ANTIMONIDE,

Descriptive Note:

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s):

• Shinji,Kawaji
• Huff,Howard
• Gatos,Harry C.

Report Date:

1965-01-21

Pagination or Media Count:

11.0

Abstract:

The field effect on the magnetoresistance of n-type indium antimonide was studied for various temperatures and magnetic fields. It was found that the ratio of the surface mobility to the bulk mobility decreases with increasing magnetic field beyond a given value of the magnetic field. This phenomenon is attributed to the quantization of the motion of electrons in the presence of an electric and magnetic field. Author

Descriptors:

• *INDIUM ALLOYS
• *SEMICONDUCTORS
• ANTIMONY ALLOYS
• ELECTRICAL RESISTANCE
• ELECTRIC FIELDS
• MAGNETIC FIELDS
• MAGNETIC PROPERTIES
• TEMPERATURE
• ELECTRIC CURRENT
• SURFACE PROPERTIES

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE