Accession Number:
AD0621205
Title:
FIELD EFFECT ON MAGNETORESISTANCE OF N-TYPE INDIUM ANTIMONIDE,
Descriptive Note:
Corporate Author:
MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
Personal Author(s):
Report Date:
1965-01-21
Pagination or Media Count:
11.0
Abstract:
The field effect on the magnetoresistance of n-type indium antimonide was studied for various temperatures and magnetic fields. It was found that the ratio of the surface mobility to the bulk mobility decreases with increasing magnetic field beyond a given value of the magnetic field. This phenomenon is attributed to the quantization of the motion of electrons in the presence of an electric and magnetic field. Author