HOT-SPOT MESOPLASMA FORMATION IN SILICON PLANAR TRANSISTORS.
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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A model is presented to explain the cause of mesoplasmas when secondary breakdown occurs in silicon planar transistors. An analysis of both aluminum and gold metalized devices is presented. To substantiate the model, data are presented from experiments using an electron microprobe and an infrared scanner, both used to analyze the second breakdown sites. Two areas of investigation are suggested which may prove effective in reducing the destructive effects of hot spots and mesoplasmas in transistors. Author