INFRARED STUDY OF LOCALIZED VIBRATIONS IN SILICON DUE TO BORON AND LITHIUM.
ECOLE NORMALE SUPERIEURE PARIS (FRANCE)
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Infrared absorption was used to determine the characteristics of localized modes in silicon due to the electrically active impurities, the isotopes of boron and lithium. The impurity and isotopic origin of all peaks was indicated. An attempt was made to deduce the configuration of both impurities in the lattice from the number of observed peaks. The temperature effect on the position, width, and integrated intensity of absorption peaks was measured. The temperature dependence of the position and line width may indicate the role of anharmonic forces around the impurities. The study of the temperature dependence on the integrated absorption is a means for distinguishing the one-phonon absorption caused by other processes.