RADIATION DAMAGE IN SEMICONDUCTORS.
Annual summary rept. no. 4,
ECOLE NORMALE SUPERIEURE PARIS (FRANCE)
Pagination or Media Count:
The effect of radiation-induced point defects on impurity diffusion in silicon is investigated using proton and electron irradiation. The active defects have a diffusion length near 3 microns in pulled silicon, and dislocations are found to act as defect sinks, but are not dominant for dislocations densities less than 10 to the 7th powersq cm. Defect precipitation is shown to occur at high defect concentrations, leading to enhanced annealing of point defects and formation of stress centers stable against annealing to 1000C. A model is proposed by which impurities diffuse by a vacancy mechanism and vacancy diffusion is limited by complex formation with oxygen atoms. Author