STATIC AND DYNAMIC PERFORMANCE OF MICROPOWER TRANSISTOR LOGIC CIRCUITS. PART I: MICROPOWER TRANSISTOR CHARACTERIZATION.
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
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Report I of this series characterizes micropower transistors for operation between 1 and 1000 microamperes of collector current. Significant effects of operation at these low currents are the increased junction leakage currents at maximum operating temperatures and the decreased current gain at minimum operating temperatures. For many transistors storage times are negligible at microampere currents therefore, the switching speed of a micropower transistor is limited by device and circuit capacitance. These effects are described by a large signal dynamic micropower transistor model which has been adapted from the Ebers-Moll transistor representation. Switching time equations are derived from simplified forms of this model. Reports II and III apply this work to micropower logic circuit design and application. Author