HIGH SPEED POWER AMPLIFIER USING AN ELECTRON SWITCHED P-N JUNCTION.
Quarterly interim development rept. no. 1, 27 May-27 Aug 65,
TUNG-SOL ELECTRIC INC LIVINGSTON N J CHATHAM ELECTRONICS DIV
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A paint on diffusion run was made and diodes were etched from this material for evaluation. The starting material was N and the boron penetration was measured using the angle lap stain technique. The penetration was 1.8 mils. The breakdown voltage measures approximately 800 V and the leakage, I sub r, is in the order of 10 microamp at 600 V. A vacuum system has been modified to include jigging for electrical connection to wafers under vacuum. A heatable platform with a therometer and variable power supply is also included so that a diode or wafer can be monitored using a curve tracer under controllable conditions of pressures and temperature. Some bare junction diodes have been monitored under various temperatures and pressures in the order of .01 micron using this equipment. Diffusion furnaces and the necessary accessories have been readied for 1 Simultaneous P and N paint on, 2 boron pre-diffusion using BBr3, 3 boron drive and simultaneous oxide growth, and 4 initial oxide growth in steam. Author