OXIDE MASKED EPITAXIAL FIELD EFFECT TRANSISTORS.
Final rept. for 19 Apr 63-31 Aug 64,
SYLVANIA ELECTRIC PRODUCTS INC WOBURN MASS SEMICONDUCTOR DIV
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The report describes work performed in developing a unipolar field effect transistor in which the channel is in a thin film of silicon epitaxially grown on silicon of the opposite polarity type. Fabrication was performed of units in which the channels were grown within windows in a surface oxide film, and also units in which the channel layer was grown over the entire slice and an oxide-masked diffusion then used to isolate and localize channel regions of the individual units. Techniques involved in the areas of fabrication process, and the relationship of these calculated distributions to the actual distributions in the devices is discussed. Characteristics of devices resulting from both methods of fabrication are reported. Using results of the investigation and fabrication of discrete FETs, an integrated operational amplifier circuit using these unipolar field effect devices as well as NPN and PNP bipolar transistors was designed, and fabrication of devices was begun. Author