Accession Number:

AD0620267

Title:

SEMICONDUCTOR MATERIALS.

Descriptive Note:

Interim engineering rept. no. 5, 15 Apr-15 Jul 65.

Corporate Author:

HP ASSOCIATES PALO ALTO CALIF

Personal Author(s):

Report Date:

1965-07-15

Pagination or Media Count:

41.0

Abstract:

The purpose and an outline of the planning of the renewed program for developing a display based upon a matrix array of GaAs1-xPx injection electroluminescent pn junction diodes is presented. A general analysis of the function of displays leads to an estimate of mans biological limit on processing visual sensory input information. A brief survey of current technology shows that the most promising future technology is a combination of modern integrated circuits with efficient light sources. The most likely candidate for such a combination are injection electroluminescent diodes, which represent the light source most compatible with integrated circuits. An analysis of the cross-grid problem for the case of the light-voltage and lightcurrent characteristics of el diodes indicates that an ideal el diode with a vanishingly small bulk series resistance would not be subject to the cross-grid limitations of resistive and capacitive el elements and would provide satisfactory picture contrast when driven in a dot sequential scanning mode for panels containing 100,000 - 1,000,000 picture elements. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE