MICROWAVE STUDIES OF SEMICONDUCTING DIAMONDS.
Final rept. for 16 Oct 63-15 Nov 64,
HYLETRONICS CORP BURLINGTON MASS
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An initially non-conducting diamond treated with boron under high temperature - high pressure conditions was shown to have semiconducting properties. By means of successive experiments in which portions of the specimen were removed by cleaving and polishing, an estimate of thickness of the semiconducting layer depth of diffusion was obtained. The conductivity and activation energy of the semiconducting layer were deduced from the data. In many similar doping experiments, negative results were obtained in the sense that the only observed microwave loss could be associated with surface deterioration formation of graphite or boron carbide. The perturbation formulas for lossy semiconducting specimens were extended and applied to the analysis of loss-versustemperature data of natural IIb semiconducting diamonds. Author