PULSING AND CROSSTALK STUDIES IN SEMICONDUCTOR CIRCUITS.
Final rept. for 15 May 63-30 Mar 65,
GENERAL ELECTRIC CO SYRACUSE N Y ELECTRONICS LAB
Pagination or Media Count:
Transistor distortion in RF amplifiers was evaluated. Additional consideration was given to parameter measurement, noise figure, AGC and transistor RF stability. A step by step design procedure was arrived at. The RF properties of field effect transistors were studied.