Accession Number:

AD0619946

Title:

THIN FILM TECHNIQUES FOR SILICON INTEGRATED CIRCUITS.

Descriptive Note:

Quarterly progress rept. no. 3, 1 Dec 64-28 Feb 65,

Corporate Author:

MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV

Personal Author(s):

Report Date:

1965-02-28

Pagination or Media Count:

81.0

Abstract:

Flash evaporation of cermet resistive materials and plasma-anodized capacitor dielectrics was investigated. A problem encountered in flash evaporation of cermet materials was interference of the electron beam and magnetic field of the deflection system with the sheetresistance monitoring circuit. Shielding the leads to the test sample and the thermocouple monitoring substrate temperature eliminated the interference. Leaks developed in the plasma-anodization system. The system has been repaired and is back in operation. Low-energy sputtering of cermet films has been investigated. Work on vapor-plated capacitor dielectrics has continued. Masks for the broadband linear amplifier circuit are now available and initial samples of the circuit are being processed. Initial samples of the thin-film logic gate are being analyzed. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE