INVESTIGATION OF THE ELECTRICAL AND OPTICAL PROPERTIES OF JUNCTIONS IN VAPOR-DEPOSITED COMPOUND SEMICONDUCTORS.
Final rept. for 1 Jun 64-31 May 65,
SPERRY RAND RESEARCH CENTER SUDBURY MASS
Pagination or Media Count:
Germanium was epitaxially deposited on gallium arsenide by means of the hydrogen reduction of GeCl4. Above 800C, germanium reacted with the GaAs seed to form a black powder. Proper deposition was observed below about 750C. Nonetheless, cross doping of the Ge layer by gallium was observed even at deposition temperatures as low as 670C the heterojunctions showed tunnel diode characteristics. Deliberately doped junctions of p-Ge on n-GaAs showed the I-V characteristics of Ge junctions, while the photovoltaic response was that of a GaAs junction. The voltage sign of the response was that of normal p-n junctions. An apparatus is described for the epitaxial deposition of GaAs. AsCl3 was flowed over hot gallium metal and GaAs deposited downstream at a lower temperature. The conditions for the preparation of high-purity, smooth layers are described, and doping techniques are given. Epitaxial lasers were made by the deposition of zinc-doped epitaxial layers on n-type GaAs substrates. Author