PRODUCTION ENGINEERING MEASURE (PEM) FOR SILICON VARACTOR DIODE.
Quarterly progress rept. no. 1, 29 Mar-30 Jun 65,
SYLVANIA ELECTRIC PRODUCTS INC WOBURN MASS SEMICONDUCTOR DIV
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The present process is capable of evolving devices to the specified Group A parameters. Yield improvement must be made so that mean values of critical parameters fall well within specified limits in accordance with good reliability practice. Results of the 100 per cent screening cycle indicate that the devices can withstand mechanical and thermal stresses called out in the specification. Analysis of the screening failures indicate necessity for tighter controls over bonding and cleaning operations. Process inspection indicates a need for improved piece part plating. Author