Accession Number:

AD0619459

Title:

NOISE OPTIMIZATION OF FIELD-EFFECT TRANSISTORS,

Descriptive Note:

Corporate Author:

NAVAL ORDNANCE TEST STATION CHINA LAKE CALIF

Personal Author(s):

Report Date:

1965-06-01

Pagination or Media Count:

47.0

Abstract:

The field-effect or unipolar transistor was compared with bipolar and thermionic devices and a method was sought to minimize internally generated noise. Both operation without a gate-biasing resistor and operation at cryogenic temperatures resulted in noise reduction. At low audio frequencies, 1f noise impaired performance but was not detrimental when large values of source resistance were used. A theoretical break-frequency for the f squared noise exhibited at ultrasonic frequencies was determined. The comparative noise performance of a unipolar and a bipolar transistor for a given resistive source was studied. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE