INVESTIGATION OF HIGH POWER GASEOUS ELECTRONICS.
Quarterly progress rept. no. 10, 16 Feb-15 May 65,
MICROWAVE ASSOCIATES INC BURLINGTON MASS
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Gas clean-up was investigated in an X-band TR tube over a 20 to 300C temperature range. An Arrhenius plot of chemisorption of water vapor in the bronze walls and brazing solder yielded an energy of activation of 6.0 kcalmole. Negligible clean-up occurred in a 1 watt RF discharge was independent of ambient temperature. Maximum clean-up of water vapor occurred at 20C for a 10 watt RF discharge at a 7070 glass-kovar window. An energy of activation of 6.0 kcalmole for clean-up at the window was measured. Diffusion controlling mechanisms were indicated because of the dependence of clean-up and chemisorption on the square root of time. Discharges in gas mixtures containing ammonia caused evolution of gas due to reduction of oxides formed in the water vapor discharges. Author