Accession Number:
AD0619326
Title:
ON THE POSSIBLE GENERATION OF NEGATIVE TEMPERATURES IN A DOPED SEMICONDUCTOR UNDER STATIONARY EXCITATION,
Descriptive Note:
Corporate Author:
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Personal Author(s):
Report Date:
1965-07-29
Pagination or Media Count:
7.0
Abstract:
It is shown that by experimentally determining the magnitude of the kinetic coefficient of the transition from the i-th level to the L-th level, and probability of elementary radiation transition at a frequency where i1, it is possible to evaluate the possibility of creating negative temperatures in semiconductors in a stationary regime of lighting.