Accession Number:

AD0619326

Title:

ON THE POSSIBLE GENERATION OF NEGATIVE TEMPERATURES IN A DOPED SEMICONDUCTOR UNDER STATIONARY EXCITATION,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

Report Date:

1965-07-29

Pagination or Media Count:

7.0

Abstract:

It is shown that by experimentally determining the magnitude of the kinetic coefficient of the transition from the i-th level to the L-th level, and probability of elementary radiation transition at a frequency where i1, it is possible to evaluate the possibility of creating negative temperatures in semiconductors in a stationary regime of lighting.

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE