Accession Number:

AD0619289

Title:

ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS,

Descriptive Note:

Corporate Author:

PHILCO BLUE BELL PA APPLIED RESEARCH LAB

Personal Author(s):

Report Date:

1965-01-01

Pagination or Media Count:

10.0

Abstract:

The wavelength dependence of the photoionization cross section for deep, semiconductor impurity centers, e.g., In doped Si, is calculated using a model in which the ground state wave function is determined solely by a suitable short range ion core potential. Absorption to excited states is explained by a long range, unperturbed coulomb potential. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE