Accession Number:
AD0619289
Title:
ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS,
Descriptive Note:
Corporate Author:
PHILCO BLUE BELL PA APPLIED RESEARCH LAB
Personal Author(s):
Report Date:
1965-01-01
Pagination or Media Count:
10.0
Abstract:
The wavelength dependence of the photoionization cross section for deep, semiconductor impurity centers, e.g., In doped Si, is calculated using a model in which the ground state wave function is determined solely by a suitable short range ion core potential. Absorption to excited states is explained by a long range, unperturbed coulomb potential. Author