FEASIBILITY STUDY OF METAL BASE TRANSISTOR.
Quarterly rept. no. 1, phase 2, 20 Jan-30 Apr 65,
SPRAGUE ELECTRIC CO NORTH ADAMS MASS
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The molybdenum-silicon phases produced by chemical vapor deposition of molybdenum on 111 Si substrates have been investigated by electron diffraction, microwave absorption, and electron microscopy. Details of some of these phases have been determined, and important differences in the resistances of 100 Si and 111 Si surfaces to molybdenum penetration have been noted. In at least one case, a layer deposited at 700C has retained its metallic character after being heated to 1200C. Author