NEW CONCEPTS FOR SOLID STATE MICROWAVE GENERATORS.
Final rept. for 1 Oct 62-28 Feb 65,
SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR PALO ALTO CALIF
Pagination or Media Count:
The basic theory of transit-time delay diodes is developed, and their maximum power output calculated. This output is about 7 of that calculated for conventional transistors on a similar basis, but the maximum operating frequency should be higher by a factor of order five. PIN charge storage diodes made by epitaxy have transition times corresponding to theory. A theoretical treatment of transient forward and reverse charge storage is applied to harmonic generator calculations. It appears that PIN diodes may be superior to conventional varactors up to several Gc. Preliminary experimental results are encouraging. The first-order theory of a new amplifying device principle, termed the Surface Controlled Avalanche Transistor, is presented. This device appears promising as a microwave amplifier up to several Gc for relatively high power. Initial experimental devices performed approximately as expected, showing no decrease in transconductance up to 1 Gc. Measurements of acoustic attenuation and velocity in P-type silicon were performed using a pulse technique with quartz transducers bonded to the ends of a rectangular rod sample. A frequency range of 608-960 Mc was used, and the results were approximately as expected. Author