THE DEVELOPMENT AND EVALUATION OF A BILATERAL TRIODE SWITCH.
Quarterly progress rept. no. 5, 13 Apr-13 Jul 65.
GENERAL ELECTRIC CO AUBURN N Y SEMICONDUCTOR PRODUCTS DEPT
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The report describes the work performed toward the development of an improved bilateral triode p-n-p-n switch. Device assembly methods are discussed, and the reasoning is given leading to the present design. Several important features of the advance final design are presented, especially those bearing on the dynamic properties of the device. Photoresist techniques as employed on this device are discussed. Author