INVESTIGATION OF ELECTRON BEAM PROCESSING OF ALUMINUM OXIDE AND RELATED MATERIALS.
Interim scientific rept.,
MATERIALS RESEARCH CORP ORANGEBURG N Y
Pagination or Media Count:
The objective of the contract is the growth of superior quality crystals by a modified electron beam float-zone process. Sapphire host crystals grown by the electron beam float-zone technique were evaluated by etch pit techniques and revealed dislocation counts as low as 1000-10000sq cm. The etch pit technique further disclosed the absence of substructure. These results compare favorably with flame-fusion crystals which typically exhibit both substructure and dislocation counts of approx. 1,000,000sq. cm. Doping studies are currently under way to determine the most feasible method of introducing controlled amounts of chromium in the high vacuum environment required by the electron beam process. Author