RESEARCH AND DEVELOPMENT FOR SEMICONDUCTOR SURFACE CONTROL AND STABILIZATION.
Final rept. for Nov 63-Feb 65,
MOTOROLA INC PHOENIX ARIZ SEMICONDUCTOR PRODUCTS DIV
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Studies were made of certain surface effects on silicon device parameters. These studies can be categorized as falling in three broad areas the oxide-ambient gas interface, the oxide-semiconductor interface, and the oxide itself. Topics included in this investigation were gross chemical contamination of oxide surfaces, oxide defects generated during manufacture of devices, interface distributions and gettering of metallics, modulation of surface electron density in MOS devices, and gamma-ray irradiation effects on conventional and MOS silicon devices. Also explained are the surface phenomena occuring in all these areas which might be consequential in the control and stabilization of semiconductor surfaces. Author