LABORATORY EXPERIMENTAL ANALYSIS OF GAMMA RADIATION EFFECTS ON SILICON ALLOY JUNCTION SEMICONDUCTOR DIODES.
PICATINNY ARSENAL DOVER N J NUCLEAR ENGINEERING DIRECTORATE
Pagination or Media Count:
The behavior of silicon diodes of the alloy-junction type is examined, during the following gamma irradiation, in terms of basic diode theory and radiation induced effects in bulk semiconductor materials. Some twenty-seven IN483B Diodes are exposed to a constant gamma dose rate of 1,000,000 roentgens per hour from a 9,110 curie Cobalt 60 source under constant geometry test conditions. Measurements are made at various gamma dose levels ranging up to 1.67 x 10 to the 8th power roentgens, corresponding to an irradiation exposure time of 167 hours. As was expected, the change in the reverse diode characteristics is significant, whereas there is negligible change observed in the forward diode characteristics. Correlation between the semiquantitative predictions from diode theory and actual experimental data indicate that the transient effects of gamma radiation on silicon diodes are relatively predictable. The procedure developed by the author for predicting the ionization current is summarized. Diode post-irradiation recovery measurements, under reverse bias conditions, show that the diode is directly affected by the exposed gamma dose. Author