Accession Number:

AD0618495

Title:

INVESTIGATION OF TRANSIENT RADIATION DAMAGE IN SEMICONDUCTOR MATERIALS.

Descriptive Note:

Quarterly progress rept. no. 7, 1 Aug-31 Oct 64,

Corporate Author:

RENSSELAER POLYTECHNIC INST TROY N Y

Personal Author(s):

Report Date:

1964-10-31

Pagination or Media Count:

19.0

Abstract:

Existing equipment was modified and a reliable single pulse light source developed which can be used in the high radiation field of the LINAC target room. One run was made at the LINAC site during which a satisfactory method of obtaining a single electron pulse was found. From the run at the LINAC, it was found that significant permanent damage occurs in one electron burst however, no transient radiation damage at 10 milliseconds after the electron pulse was observed. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE