Accession Number:

AD0618494

Title:

INVESTIGATION OF TRANSIENT RADIATION DAMAGE IN SEMICONDUCTOR MATERIALS.

Descriptive Note:

Quarterly progress rept. no. 8, 1 Nov 64-31 Jan 65,

Corporate Author:

RENSSELAER POLYTECHNIC INST TROY N Y

Report Date:

1965-01-31

Pagination or Media Count:

21.0

Abstract:

Transient radiation damage effects in high purity p-type silicon due to 50 MeV electrons were observed. Roughly equal changes in magnitude and decay time of photoconductivity occurred 30 to 60 of these changes annealed out within the first few minutes after the electron pulse. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE