INVESTIGATION OF TRANSIENT RADIATION DAMAGE IN SEMICONDUCTOR MATERIALS.
Quarterly progress rept. no. 8, 1 Nov 64-31 Jan 65,
RENSSELAER POLYTECHNIC INST TROY N Y
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Transient radiation damage effects in high purity p-type silicon due to 50 MeV electrons were observed. Roughly equal changes in magnitude and decay time of photoconductivity occurred 30 to 60 of these changes annealed out within the first few minutes after the electron pulse. Author