GAAS LASER DIODES.
Quarterly progress rept. no. 2, 1 Oct-31 Dec 64,
KORAD CORP SANTA MONICA CALIF
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This report describes the device development work performed on GaAs injection lasers during the second quarter of the contract period. Particular emphasis was placed on increasing the external power efficiency of the diode laser. Studies of laser performance as a function of junction depth have also been made, with the junction being formed by Zn diffusion from the vapor phase. Two metallizing methods were tried to determine the influence of the surface treatment on laser performance. Twenty laser diodes fabricated by previouslydescribed techniques were delivered early in the report period. Author