EXPLORATORY DEVELOPMENT OF THE Q-FACTOR TECHNIQUE.
Quarterly progress letter no. 5 for period ending 30 Jun 65,
BENDIX CORP SOUTHFIELD MICH
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Data for predicting transistor gain degradation in a neutron radiation environment were obtained from experimental studies of the variation of the radiation damage constant K as a function of temperature and current during both measurement and irradiation. Relatively small spreads in the values of K were obtained when the individual base transit times were measured and the radiation exposures were precisely determined. Radiation damage effect data from 20 different n-p-n silicon transistor types were obtained and normalized to the same minority carrier concentration in the base region, using the transit time and the V sub BE-I sub C characteristics of the specific transistors. The resulting relative dispersions of the damage constant for minority carrier densities of 10 to the 15th powercc and 10 to the 16th powercc were typically 15 to 20 percent. These dispersions indicate that electrical measurements of transistor physical parameters can provide reasonably accurate predictions of the gain degradation for a wide variety of transistors without additional radiation testing of specific transistor types. Author