STUDY FOR GENERALIZED MODEL FOR SEMICONDUCTOR RADIATION RESPONSE PREDICTION.
Quarterly progress rept. no. 1, 15 Dec 64-15 Mar 65,
NORTHROP CORP VAN NUYS CALIF VENTURA DIV
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The lumped-model technique was applied to the characterization of the radiation-induced transient response observed in diodes and transistors. A significant result of the diode analysis was the comparison of the lumped-model response to the solution of the differential equations in describing the diode photocurrent. Application of the lumped-model analysis to the ionizing radiation effects in a grown junction transistor was also straightforward and encouraging. A general expression for the common-emitter transient response was developed in terms of the transistor and commonemitter circuit parameters. This expression allows the calculation of the total transient collector photocurrent as a function of the source resistance, and the quiescent operating current. The experiments necessary to determine the diode and transistor lumped-model parameters were defined. These experiments were completed with the grown-junction transistors specimens, completing the information required for numerical prediction of the transistor response. Author