SEMICONDUCTOR DESIGN EFFECTS ON RADIATION RESISTANCE.
Quarterly rept. no. 1, 15 Dec 64-15 Mar 65,
HUGHES AIRCRAFT CO NEWPORT BEACH CALIF MICROELECTRONICS LAB
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All the standard 2N708 transistors and all of the special transistors, except the PNP transistors, were fabricated. These special devices, incorporating a total of fourteen surface variations, were organized under the following general categories surface damage, epitaxial layers, thermal oxide layers, pyrolytic oxide layers, and surface potential changes. The test circuit used with the Hughes Linac for measuring the radiation response was designed to limit to a minimum the interference from electromagnetic noise and the circuit time constant and still provide sufficient signal strength. Irradiation data included in this report were obtained on a total of six surface variations with the experimental error as indicated by root-mean square deviations less than 3. Although specific conclusions concerning the numerous surface variations cannot be made until all the special devices have been irradiated and the data statistically analyzed, initial data tends to indicate that surfaces which are more satisfactory from a device manufacturing veiwpoint are also more satisfactory from a transient radiation environment. Author