Accession Number:

AD0618049

Title:

DEFINITION OF CERTAIN PARAMETERS OF SEMICONDUCTOR MATERIALS WITH HELP OF IRRADIATION OF P-N JUNCTIONS BY ELECTRONS,

Descriptive Note:

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO

Personal Author(s):

Report Date:

1965-07-13

Pagination or Media Count:

7.0

Abstract:

The action of an electron beam on silicon photocells with a barrier layer is investigated in particular, the dependence of the current of a photocell irradiated by electrons on the energy of the electrons during its change from 0 to 30 Kev and on the intensity of the electron beam is examined.

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE