Average value of 1.5 Gc noise figure of improved L-78A devices fabricated by means of a modified emitter alloying process during the first part of the third quarter was 4.4 db compared to approximately 4.8 db for L-78A devices reported in the second quarter. The measured value of the rbCc product using the G-2 expanded contact pattern is 2.0 psecs compared to previously reported values of 2.5 to 3.0 psecs using the L-78A G-1 contact. Measured value of 1.5 Gc noise figure, corrected for first stage gain, using the new L-78B pattern is typically 4.1 db. The measured value of 3.0 Gc noise figure, uncorrected, is typically 7.2 db with a first stage gain of 4.0 db. The G-2 expanded contact pattern was used in conjunction with the L-78B for fabricating these devices. We are experiencing difficulty in obtaining suitable L-93A masks. The yield of devices fabricated from the L-93A pattern is very poor. As an expedency, we have ordered a new pattern, simpler in design scope than the L-93A mask. The pattern designation is X66. Several important steps have been taken in order to achieve more precise control of evaporated films during fabrication of the PEM device. Characteristics of the Tl-line package are included in this report to show the reduction in common lead inductance that resulted from using two lead wires on the common element of the transistor. Results of operating and storage life test on L-78 and L-78A devices are favorable. Latest environmental testing on L-78A devices remains unfavorable.