Accession Number:

AD0617543

Title:

DEVELOPMENT OF EPITAXIAL TECHNOLOGY FOR MICROELECTRONICS AND LARGE AREA DEVICE APPLICATIONS.

Descriptive Note:

Quarterly rept. no. 12, 1 Mar-31 May 65,

Corporate Author:

SYLVANIA ELECTRIC PRODUCTS INC WOBURN MASS SEMICONDUCTOR DIV

Personal Author(s):

Report Date:

1961-06-01

Pagination or Media Count:

33.0

Abstract:

Work has essentially been completed on PNPN lightsensitive matrices made by both oxide-masked epitaxy and by epitaxy-diffusion techniques. Matrices fabricated with the latter technique are considerably more sensitive, turning on with only 0.2 foot-candles of incident illumination. This sensitivity can be reduced with a subsequent improvement in uniformity from unit to unit. Measurement methods are described, and light sensitivity results are given for both types of units. A search for the best method for making matched NPN-PNP transistor pairs has begun. A discussion of the pros and cons of all known methods is presented, with the conclusion that the beam lead process offers the most practical way to achieve such devices. A slowing down of this portion of the program will result to allow related company-funded beam lead developments to catch up with device fabrication developments under the contract. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE