STUDY OF SURFACE STATES IN SEMICONDUCTORS.
Quarterly rept. no. 6, 5 Sep-4 Dec 64,
TYCO LABS INC WALTHAM MASS
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Surface states on silicon oxidized by both thermal and anodic growth have been studied by two complementary experimental techniques - the pulsed field effect, and capacity measurements over a wide range of frequency and temperature. The two have revealed similar surface levels, and have led to the following conclusions anodic oxidation creates an inversion layer on N-type silicon, which can be removed by heat treatment and thermal oxidation leads to increased dislocation density, and results in reduction of the surface state density. Author