Accession Number:

AD0614986

Title:

STUDY OF SURFACE STATES IN SEMICONDUCTORS.

Descriptive Note:

Quarterly rept. no. 6, 5 Sep-4 Dec 64,

Corporate Author:

TYCO LABS INC WALTHAM MASS

Personal Author(s):

Report Date:

1965-04-01

Pagination or Media Count:

33.0

Abstract:

Surface states on silicon oxidized by both thermal and anodic growth have been studied by two complementary experimental techniques - the pulsed field effect, and capacity measurements over a wide range of frequency and temperature. The two have revealed similar surface levels, and have led to the following conclusions anodic oxidation creates an inversion layer on N-type silicon, which can be removed by heat treatment and thermal oxidation leads to increased dislocation density, and results in reduction of the surface state density. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE