THIN FILM MEASUREMENT TECHNIQUES.
Final rept. for Jul 63-Aug 64,
GENERAL DYNAMICS/ELECTRONICS ROCHESTER N Y PHYSICAL ELECTRONICS LAB
Pagination or Media Count:
An advance in the current density measurement of electron tunneling in aluminum oxide has been made. The structure under study is an Al-Al2O3-Al thin-film diode. In these devices a current density measure of 242 ampsq cm has resulted from modifications in measurement technique. Previously reported voltage-current and temperature-conductivity measurements support the belief that this tunnel current is due to the presence of traps. Recent photoemission measurements have strengthened this belief. Some properties of anode luminescence in aluminum oxide have been observed. Electrical and optical properties of thin-film copper have been investigated and have supplemented similar work with bismuth films. The anomalous result obtained for copper, that transmittance of radiation is greater for the thicker film than for the thinner film, is a further confirmation of the tunneling model for grain-boundary scattering in polycrystalline metal films. The photoemission measurements, quantum tunneling calculations, the anode luminescence study of aluminum oxide, the optical measurements of thin polycrystalline copper films, and a charge versus voltage display are discussed. Author