Accession Number:

AD0614870

Title:

X-BAND MODULATION OF GAAS LASERS,

Descriptive Note:

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s):

Report Date:

1964-12-28

Pagination or Media Count:

1.0

Abstract:

This correspondence reports CW amplitude modulation of GaAs injection lasers at X band. The highest modulation frequency was 11 Gcs, a limit imposed by components of the experimental setup. The X-band modulating signal is amplified in a traveling-wave amplifier and coupled to the laser. Two directional couplers monitor the forward and reflected RF power. The RF power is coupled to the laser in a waveguide structure. In this structure, the copper fins act as a short circuit to the X-band power while the modulated infrared radiation passes unaffected neglecting some blockage. The laser, located between two sections of a copper post, is spaced a half guide wavelength at 9.1 Gcs from the RF shortcircuiting fins.

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE