EXPLORATORY DEVELOPMENT OF THE Q-FACTOR TECHNIQUE.
Quarterly progress letter no. 4 for period ending 31 Mar 65,
BENDIX CORP SOUTHFIELD MICH
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Mean composite radiation damage constants, including the percent relative dispersion, are reported as a function of emitter current density for 22 different n-p-n silicon transistor types irradiated in a neutron environment of 7 x 10 to the 13th power nsq cm, E 0.1 Mev. A technique is described for the resolution of reciprocal gain into damage effect components in the base and space charge regions. The technique yields different damage constants for each region and results in a more accurate description of the radiation effects. Results are given for the application of this method to the 2N1613 transistor. A discussion is included of the determination of transistor physical parameters required for prediction of radiation damage, using the Boothroyd-Trofimenkoff model with data derived for the 2N1613 transistor. Results are shown from an isochronal annealing experiment performed on two pairs of 2N1613 transistors, one pair previously irradiated in neutrons and the other in a Cobalt 60 environments, each pair consisting of an actively and a passively irradiated unit. Author