Accession Number:

AD0614529

Title:

EFFECT OF UNIAXIAL STRESS ON THE EXCITATION SPECTRA OF DONORS IN SILICON,

Descriptive Note:

Corporate Author:

PURDUE UNIV LAFAYETTE IND

Personal Author(s):

Report Date:

1964-01-01

Pagination or Media Count:

6.0

Abstract:

When a uniaxial stress is applied to a multivalley semiconductor like silicon, the various conduction band minima shift in energy with respect to one another. Further, the site symmetry of a substitutional Group V donor in silicon, which is T in the unstrained crystal, is lowered by the stress. The purpose of the present paper is to report experimental observations on the splittings and the polarization effects exhibited by the excitation lines of neutral Group V donors in silicon subjected to uniaxial stress, and interpret them on the basis of the above effects.

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE