GROWTH AND CHARACTERIZATION OF SINGLE CRYSTALS OF RARE EARTH COMPOUNDS.
WESTINGHOUSE RESEARCH LABS PITTSBURGH PA
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The spin disorder effect on scattering of the conduction electrons was examined together with the increases in the residual resistivity of Gd observed in various intrarare earth alloys. It was found that the extrapolated values of the spin-disorder resistivity reported in the literature were much too small to account for the inelastic scattering with spin flip. This large discrepancy between the calculated and extrapolated value of spin-disorder resistivity has heretofore been overlooked. It may imply the existence of short-range order of spins in the paramagnetic state at temperatures considerably higher than the Curie point. Resistance measurements were conducted on a polycrystalline sample of Si-doped CrBr3. The electrical data revealed that the compound became a semiconductor only in the paramagnetic state. Below the Curie temperature it remained an insulator. The excess electrons donated by the Si atoms in CrBr3 thus behave markedly differently from those donated by La in EuS. Experimental work was continued on the growth of crystals of La-doped EuS. An investigation was begun on Ba-doped NdS. Further progress was made in the study of the magnetic structures of the solid solutions of CrTe and CrSb. Author