EVALUATION OF FIELD-EFFECT TRANSISTORS.
LOCKHEED MISSILES AND SPACE CO SUNNYVALE CALIF
Pagination or Media Count:
The report, a joint effort between reliability and nuclear effects describes the electrical parameters of field-effect transistors FET due to the effects of nuclear radiation. The report describes the method of measuring FET electrical parameters, a description of the radiation fields to which the FETs were subjected, and the analysis of the results of subjecting the FETs to a nuclear radiation environment.