Accession Number:

AD0614163

Title:

HIGH-FIELD MAGNETORESISTANCE OF INHOMOGENEOUS SEMICONDUCTORS AND PLASMAS. III. TWO-DIMENSIONAL INHOMOGENEITY DISTRIBUTIONS,

Descriptive Note:

Corporate Author:

BELL TELEPHONE LABS INC MURRAY HILL N J

Personal Author(s):

Report Date:

1964-03-24

Pagination or Media Count:

8.0

Abstract:

In previous papers studies were made of the high magnetic field magnetoresistance of a classical model semiconductor or a plasma produced by the presence in the sample of more or less random spatial inhomogeneities on a scale small compared to the size of the sample. Computations of the leading terms of the components of the resistivity tensor are extended to the two-dimensional case in which the external magnetic field is inclined but not perpendicular to the plane of variation of the spatial inhomogeneity distribution. The field is applied along the z axis, and the inhomogeneity distribution is characterized by a sufficiently smooth potential. While the magnetoresistance ratios saturate in the y and z directions, one finds that this ratio is proportional to the square of the field in the x direction. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE