RESEARCH ON THE APPLICATION OF FERRO-AND FERRIELECTRIC PHENOMENA IN COMPUTER DEVICES.
Final rept. for Aug 62-Oct 64,
CATHOLIC UNIV OF AMERICA WASHINGTON D C
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The objective of this research was to demonstrate that capacitor elements composed of ferrielectrics of the MBO type employed as a dielectric represent an important improvement as compared to ordinary ferroelectric capacitors and that they can be utilized as a logic and memory device. Fabrication techniques of these ferrielectric devices are discussed with a special emphasis on the preparation of uniformity when large quantities of such devices are fabricated. The development of field controlled polarization transfer devices Transpolarizers continued utilizing uniform quality ferrielectric crystals as a dielectric. The development of various logic circuits is presented and for the first time a half adder was successfully operated utilizing capacitors exhibiting ferroelectric properties as switching elements. A small section of a random access memory was constructed and investigated utilizing ferrielectric transpolarizers. Author