NEW CONCEPTS FOR SOLID STATE MICROWAVE GENERATORS.
Quarterly rept. no. 7, 1 Jul-31 Oct 64,
SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR PALO ALTO CALIF
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An extensive series of experimental surface controlled avalanche transistor SCAT devices, all basically planar structures, have been made. Different substrate drain resistivities, different source diffusion schedules, and different means of producing the thin oxide under the gate region were investigated. Two geometries were used, a circular and a stripe configuration. Although few consistent results were achieved, it appeared that the best oxide of those investigated was produced by thermal oxidation in dry oxygen at 1100C. By observing light emission, it was found that the operation was probably quite nonuniform, accounting for the transconductance being less than calculated. Two types of drift in the characteristics were noted, one reversible upon reversing gate to source voltage, and the other apparently irreversible. The first was traced to ion motion on the oxide surface, but the second is not yet understood. Author