INTEGRATED SILICON DEVICE TECHNOLOGY. VOLUME VI. UNIPOLAR TRANSISTORS.
Rept. for Jun-Dec 64,
RESEARCH TRIANGLE INST DURHAM N C
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This report discusses the theory and design parameters for unipolar field effect transistors in integrated circuits. The work is divided into four major sections. The first two major sections discuss the theory and characteristics of junction and surface MOS unipolar transistors. A detailed discussion is given of both the dc and small signal ac characteristics. The next section discusses design considerations for unipolar transistors in integrated circuits. This includes discussions of isolation problems, topological design, and compatibility of integrated unipolar transistors with other circuit components. Design examples are given of unipolar transistors for integrated circuits. The last major section discusses some possible circuit applications of unipolar transistors. Author