CHEMICAL FORMATION OF MICROCIRCUIT ELEMENTS.
Final rept. for 28 Jan 63-30 Nov 64,
WESTON INSTRUMENTS INC NEWARK N J
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The reactive sputtering technique was applied to form films of titanium and titanium oxide with a wide range of resistivities. Low resistance metallic films and insulating oxide films are found to be suitable for resistor and capacitor microcircuit elements respectively. Dielectric constants of over 100, and reasonably low dissipation factors have been achieved. Data furnished include frequency dependence of capacitor cza,txteristics, voltage breakdown, long term stability of resistor and capacitor elements, temperature coefficients and some basic film properties. The feasibility of using titanium-titanium oxide film contact for rectification is demonstrated. High static rectification ratios are obtained. Author