Accession Number:

AD0613036

Title:

FAILURE MECHANISMS AT SURFACES AND INTERFACES.

Descriptive Note:

Final rept. for 1 Jul 63-1Aug 64,

Corporate Author:

GENERAL ELECTRIC CO SYRACUSE N Y

Report Date:

1965-02-01

Pagination or Media Count:

112.0

Abstract:

A study of the aging and failure characteristics of thin film field effect triodes was carried out. Techniques for applying stress to the sample devices under controlled conditions were developed and the resulting changes of the characteristics were measured. Samples stored under dry argon at 30C remained stable after 1 year. An increase of the humidity to 30 caused a decrease of the threshold voltage. During storage at a constant temperature from 50C to 122C, the threshold voltage increased reaching a stable value within a few days. During d.c. electrical stress the threshold voltage either decreased or increased reaching a stable value at constant gate voltage after a few hundred hours. These different failure modes under electrical stress could be correlated with differences in the slow relaxation characteristic of the field effect conductivity which in turn was traced to the treatment of the semiconductor surface during device fabrication. The threshold voltage was the only parameter which appeared to be changing appreciably indicating that the changes were occurring at the semiconductor-insulator interface. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE