Accession Number:

AD0612599

Title:

PRODUCTION ENGINEERING MEASURE. ITEM 3: SILICON PLANAR EPITAXIAL TRANSISTOR.

Descriptive Note:

Final rept. for 1 May 62-28 Feb 64,

Corporate Author:

GENERAL ELECTRIC CO SYRACUSE N Y SEMICONDUCTOR PRODUCTS DEPT

Personal Author(s):

• RUGARE,A. S.

Report Date:

1964-02-28

Pagination or Media Count:

223.0

Abstract:

The report presents a detailed narrative of the results of investigations conducted from May 1962 to February 1964 in each of the following task improved KPR resolution, collector etching, contact evaporation and alloying, boron diffusion phosphorus diffusion collector contact to the Header, interconnections, reliability measurement, process specifications, quality control manual, and production quality test. Data, sketches, and photographs relative to the work are included with the discussion of work accomplished relative to each task.

Descriptors:

• *SILICON
• PRODUCTION
• TRANSISTORS
• EPITAXIAL GROWTH
• RELIABILITY(ELECTRONICS)
• PERFORMANCE(ENGINEERING)
• PROCESSING
• BORON
• PHOSPHORUS
• DIFFUSION
• ELECTRIC WIRE
• BONDING
• ENCAPSULATION
• QUALITY CONTROL
• LIFE EXPECTANCY(SERVICE LIFE)
• MANAGEMENT ENGINEERING

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE